We report on integration of GaAs nanowire-based light-emitting-diodes (NW-LEDs) on Si substrate by selective-area metalorganic vapor phase epitaxy. The vertically aligned GaAs/AlGaAs core-multishell nanowires with radial p-n junction and NW-LED array were directly fabricated on Si. The threshold current for electroluminescence (EL) was 0.5 mA (current density was approximately 0.4 A/cm 2), and the EL intensity superlinearly increased with increasing current injections indicating superluminescence behavior. The technology described in this letter could help open new possibilities for monolithic- and on-chip integration of III−V NWs on Si. Figure S1 Excitation power dependence of PL intensity for peak P1 (closed red circles) and P2 (closed blue circles). Figure S2 (a) Peak deconvolution for PL under high excitation (11 kW/cm 2) Inset shows PL under weak excitation under weak excitation power denisity (0.1 kW/cm 2) (b) Excitation power dependence of Peak P3.

Women’s volleyball prepares for post-season By Melanie Parncutt Stevenson women’s volleyball team is battling their competition and their own adversity, as they work for a successful season despite facing a tough schedule. Women's volleyball closes out regular season, prepares for MAC tournament by Kara Biernat / The Daily News / 4:36 p.m. 10, 2016 As Ball State women’s volleyball wraps up the regular season this weekend, the team is directing its focus on the Mid-American Conference tournament. MACOMB — Last year, the Macomb L’Anse Creuse North volleyball team saw its season end with a district semifinal defeat to Macomb Dakota. Less than a week into the 2017 campaign, the Crusaders were able to exact revenge on the Cougars, topping the local rival twice in a tournament.

Figure S3 Schematic illustrations for fabrication process of vertical NW-based LEDs: (a) selective-area growth of core-multishell NWs with p-n junction on Si, (b) deposition of Al 2O 3 (20 nm) by atomic layer deposition (ALD), and SiO 2 (50 nm) by RF sputtering, (c) Spin-coating of polymer, (d) RIE etching for top parts of the NWs, (e) wet etching for Al 2O 3/SiO 2 by buffered HF solution, (f) Metal (Cr/Au) deposition, and (g) mechanical polishing for top parts of the metal-coated NWs. (h), (i), and (j) show SEM images for Figure S3(d), (f), and (g), respectively.

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Figure S1 Excitation power dependence of PL intensity for peak P1 (closed red circles) and P2 (closed blue circles). Figure S2 (a) Peak deconvolution for PL under high excitation (11 kW/cm 2) Inset shows PL under weak excitation under weak excitation power denisity (0.1 kW/cm 2) (b) Excitation power dependence of Peak P3. 17 celebs to follow on Snapchat for everything health and beauty Soo Joo Park.